1 composite transistors XP06401 (xp6401) silicon pnp epitaxial planer transistor for general amplification features two elements incorporated into one package. reduction of the mounting area and assembly cost by one half. basic part number of element 2sb0709a(2sb709a) 2 elements absolute maximum ratings (ta=25?c) unit: mm marking symbol: 5o internal connection parameter symbol ratings unit collector to base voltage v cbo C60 v collector to emitter voltage v ceo C50 v emitter to base voltage v ebo C7 v collector current i c C100 ma peak collector current i cp C200 ma total power dissipation p t 150 mw junction temperature t j 150 ?c storage temperature t stg C55 to +150 ?c rating of element overall electrical characteristics (ta=25?c) parameter symbol conditions min typ max unit collector to base voltage v cbo i c = C10 a, i e = 0 C60 v collector to emitter voltage v ceo i c = C2ma, i b = 0 C50 v emitter to base voltage v ebo i e = C10 a, i c = 0 C7 v collector cutoff current i cbo v cb = C20v, i e = 0 C 0.1 a i ceo v ce = C10v, i b = 0 C100 a forward current transfer ratio h fe v ce = C10v, i c = C2ma160 460 forward current transfer h fe ratio h fe (small/large) *1 v ce = C10v, i c = C2ma0.5 0 .99 collector to emitter saturation voltage v ce(sat) i c = C100ma, i b = C10maC 0.3 C 0.5 v transition frequency f t v cb = C10v, i e = 1ma, f = 200mhz 80 mhz collector output capacitance c ob v cb = C10v, i e = 0, f = 1mhz 2.7 pf 1 : emitter (tr1) 4 : collector (tr2) 2 : emitter (tr2) 5 : base (tr1) 3 : base (tr2) 6 : collector (tr1) eiaj : scC88 smini6-g1 package 5 10 2.1 0.1 1.25 0.10 1 3 2 0.2 0.05 0.12 +0.05 ?0.02 0.2 0.1 (0.425) 1.3 0.1 2.0 0.1 0 to 0.1 0.9 0.1 0.9 +0.2 ?0.1 6 5 4 (0.65) (0.65) 16 5 tr2 tr1 2 34 *1 ratio between 2 elements note ) the part number in the parenthesis shows conventional part numbe r .
2 composite transistors p t ta i c v ce i c i b i b v be i c v be v ce(sat) i c h fe i c f t i e c ob v cb 0 0 C18 C2 C4 C6 C8 C10 C12 C14 C16 C60 C50 C40 C30 C20 C10 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b = C300 a C250 a C200 a C150 a C100 a C50 a 0 0 C100 C200 C300 C400 C60 C50 C40 C30 C20 C10 base current i b ( a ) collector current i c ( ma ) v ce =C5v ta=25?c 0 0 C0.4 C0.8 C1.2 C1.6 C400 C350 C300 C250 C200 C150 C100 C50 base to emitter voltage v be ( v ) base current i b ( a ) v ce =C5v ta=25?c 0 0 C2.0 C1.6 C1.2 C0.8 C0.4 C240 C200 C160 C120 C80 C40 base to emitter voltage v be ( v ) collector current i c ( ma ) v ce =C5v ta=75?c C25?c 25?c C0.001 C0.003 C1 C3 C0.01 C0.03 C0.1 C0.3 C1 C3 C10 C10 C30 C100 C300 C1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 C1 C 3 600 500 400 300 200 100 C10 C 30 C100 C 300 C1000 forward current transfer ratio h fe collector current i c ( ma ) v ce = C10v ta=75?c 25?c C 25?c 0 0.1 0.3 40 80 120 160 140 100 60 20 1 3 10 30 100 transition frequency f t ( mhz ) emitter current i e ( ma ) v cb =C10v ta=25?c 0 C1 C5 C20 C2 8 7 6 5 4 3 2 1 C3 C50 C10 C30 C100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 0 50 100 150 200 250 02040 80 60 140 120 100 160 ambient temperature ta ( ?c ) total power dissipation p t ( mw ) XP06401
3 composite transistors nf i e nf i e h parameter i e h parameter v ce 0 0.01 0.03 6 5 4 3 2 1 0.1 0.3 1 3 10 noise figure nf ( db ) emitter current i e ( ma ) v cb =C5v f=1khz r g =2k ? ta=25?c 0 0.1 20 2 18 4 6 8 10 12 14 16 0.3 1 3 10 2 0.5 0.2 5 noise figure nf ( db ) emitter current i e ( ma ) v cb =C5v r g =50k ? ta=25?c f=100hz 10khz 1khz 1 0.1 2 3 5 10 20 30 50 100 200 300 0.3 1 3 10 2 0.5 0.2 5 parameter h emitter current i e ( ma ) v ce =C5v f=270hz ta=25?c h fe h oe ( s) h ie (k ? ) h re ( 10 C4 ) 1 C1 2 3 5 10 20 30 50 100 200 300 C3 C10 C30 C100 C20 C5 C2 C50 parameter h collector to emitter voltage v ce ( v ) i e =2ma f=270hz ta=25?c h fe h oe ( s) h ie (k ? ) h re ( 10 C4 ) XP06401
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